- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359012 > M28F201-90K1TR (意法半導(dǎo)體) 8-Input Positive-NAND Gates 14-SSOP 0 to 70 PDF資料下載
參數(shù)資料
| 型號： | M28F201-90K1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-90K1TR |
Command
Cycles
1st Cycle
2nd Cycle
Operation
A0-A17
DQ0-DQ7
Operation
A0-A17
DQ0-DQ7
Read
1
Write
X
00h
Electronic
Signature
(2)
2
Write
X
80h or 90h
Read
00000h
20h
Read
00001h
F4h
Setup Erase/
2
Write
X
20h
Erase
Write
X
20h
Erase Verify
2
Write
A0-A17
A0h
Read
X
Data Output
Setup Program/
2
Write
X
40h
Program
Write
A0-A17
Data Input
Program Verify
2
Write
X
C0h
Read
X
Data Output
Reset
2
Write
X
FFh
Write
X
FFh
Notes:
1. X = V
or V
.
2. Refer also to the Electronic Signaturetable.
Table 5. Commands
(1)
Standby Mode.
In the Standby Mode the maxi-
mum supply current is reduced. The device is
placed in the Standby Mode by applying a High
level to the Chip Enable (E) input. When in the
StandbyModetheoutputsare ina highimpedance
state, independantof the Output Enable (G) input.
Output Disable Mode.
When the Output Enable
(G) is High the outputs are in a high impedance
state.
ElectronicSignatureMode.
Thismodeallowsthe
read out of twobinary codesfromthedevicewhich
identify the manufacturer and device type. This
mode is intended for use by programming equip-
ment to automaticallyselect the correct erase and
programmingalgorithms.The ElectronicSignature
Mode is active when a highvoltage (11.5V to 13V)
isappliedtoaddresslineA9withEandGLow.With
A0 Low the output data is the manufacturercode,
when A0 is High the output is the device code. All
other address lines should be maintained Low
while reading the codes. The electronic signature
can also be accessed in Read/Writemodes.
READ/WRITE MODES, 11.4V
≤
V
PP
≤
12.6V
When V
PP
is High both read and write operations
may be performed.These are defined by thecon-
tents of an internalcommand register. Commands
may be written to this register to set-up and exe-
cute,Erase,Erase Verify,Program,ProgramVerify
and Reset modes. Each of these modes needs 2
cycles. Each mode startswith a write operationto
set-upthecommand,this is followedbyeitherread
or write operations. The device expects the first
cycle to be a write operationand doesnot corrupt
data at any location in the memory. Read mode is
set-upwith one cycle only and maybe followedby
any number of read operations to output data.
ElectronicSignatureRead modeis set-up with one
cycle and followed by a read cycle to output the
manufactureror devicecodes.
Awritetothecommandregisterismadebybringing
WLowwhileEisLow. ThefallingedgeofWlatches
Addresses, while the rising edge latches Data,
which are used for those commands that require
address inputs, command input or provide data
output. The supply voltage V
CC
and the program
voltageV
PP
canbeappliedinany order. When the
device is powered up or when V
PP
is
≤
6.5V the
contentsof the command register defaults to 00h,
thus automatically setting-up Read operations. In
addition a specific command may be used to set
the command registerto 00h for readingthe mem-
ory. The system designer may chose to provide a
constanthigh V
PP
anduse the register commands
for all operations,or to switch the V
PP
from low to
high only when needing to erase or program the
memory. All command register access is inhibited
whenV
CC
fallsbelowthe Erase/WriteLockoutVolt-
age (V
LKO
) of 2.5V.
If the device is deselected during Erasure, Pro-
gramming or verifying it will draw active supply
currents until the operationsare terminated.
The device is protected against stress caused by
long erase or programtimes. If the end ofErase or
Programming operations are not terminated by a
Verify cycle within a maximumtime permitted, an
internal stop timer automatically stops the opera-
tion.The deviceremains in aninactivestate,ready
to start a Verifyor ResetMode operation.
4/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-90K3R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90K6R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90K6TR | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90N1R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90N1TR | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-90K3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90N1 | 功能描述:閃存 TSOP-32 256KX8 90NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。