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參數(shù)資料
| 型號： | M28F201-90XN1R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-90XN1R |
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO
Input or Output Voltages
–0.6 to 7
V
V
CC
Supply Voltage
–0.6 to 7
V
V
A9
A9 Voltage
–0.6 to 13.5
V
V
PP
Program Supply Voltage, during Erase
or Programming
–0.6 to 14
V
Note:
Except for the rating ”O(jiān)perating Temperature Range”, stressesabove those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation ofthe device at these or any other conditions above
those indicated in the Operating sections of this specification is notimplied. Exposure to AbsoluteMaximum Ratingconditions for extended
periods may affect device reliability.Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
Table 2. Absolute MaximumRatings
Identifier
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Hex Data
Manufacturer’s Code
V
IL
0
0
1
0
0
0
0
0
20h
Device Code
V
IH
1
1
1
1
0
1
0
0
F4h
Table 4. Electronic Signature
V
PP
Operation
E
G
W
A9
DQ0 - DQ7
Read Only
V
PPL
Read
V
IL
V
IL
V
IH
A9
Data Output
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Electronic Signature
V
IL
V
IL
V
IH
V
ID
Codes
Read/Write
(2)
V
PPH
Read
V
IL
V
IL
V
IH
A9
Data Output
Write
V
IL
V
IH
V
IL
Pulse
A9
Data Input
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Notes:
1. X = V
or V
.
2. Refer also tothe Command table.
Table 3. Operations
(1)
3/21
M28F201
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|---|---|
| M28F201-90XN1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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| M28F201-90XN6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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