參數(shù)資料
型號(hào): CY7C1381D-133BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
中文描述: 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 19/29頁
文件大小: 477K
代理商: CY7C1381D-133BZXC
PRELIMINARY
CY7C1381D
CY7C1383D
Document #: 38-05544 Rev. *A
Page 19 of 29
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.3V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[16, 17]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C 3.3V
– 5%/+10% 2.5V – 5%
–40°C to +85°C
V
DD
V
DDQ
to
V
DD
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
V
I
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[16]
2.0
1.7
–0.3
–0.3
–5
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[16]
I
X
Input Load
Input Current of MODE Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
30
Input Current of ZZ
–30
5
5
I
OZ
I
DD
Output Leakage Current GND
V
I
V
DD,
Output Disabled
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max., I
OUT
= 0 mA,
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
210
175
140
120
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = f
MAX,
inputs switching
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
Max. V
DD
, Device Deselected,
V
IN
V
DDQ
– 0.3V or V
IN
0.3V,
f = f
MAX
, inputs switching
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
I
SB2
All speeds
70
mA
I
SB3
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
130
110
mA
mA
I
SB4
All Speeds
80
mA
Notes:
16.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > -2V (Pulse width less than t
CYC
/2).
17.T
Power-up
: Assumes a linear ramp from 0v to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
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