參數(shù)資料
型號: CC113LRTKT
廠商: TEXAS INSTRUMENTS INC
元件分類: 無繩電話/電話
英文描述: TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20
封裝: 4 X 4 MM, GREEN, PLASTIC, VQFN-20
文件頁數(shù): 4/75頁
文件大?。?/td> 1454K
代理商: CC113LRTKT
CC113L
SWRS108A
Page 12 of 68
4.3
Crystal Oscillator
TA = 25 C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using [1] and [2].
Parameter
Min
Typ
Max
Unit
Condition/Note
Crystal
frequency
26
27
MHz
For compliance with modulation bandwidth requirements under EN 300 220
V2.3.1 in the 863 to 870 MHz frequency range it is recommended to use a 26
MHz crystal for frequencies below 869 MHz and a 27 MHz crystal for frequencies
above 869 MHz
Tolerance
±40
ppm
This is the total tolerance including a) initial tolerance, b) crystal loading, c)
aging, and d) temperature dependence. The acceptable crystal tolerance
depends on RF frequency and channel spacing / bandwidth.
Load
capacitance
10
13
20
pF
Simulated over operating conditions
ESR
100
Start-up time
150
s
This parameter is to a large degree crystal dependent. Measured on [1] and [2]
using crystal AT-41CD2 from NDK
Table 8: Crystal Oscillator Parameters
4.4
Frequency Synthesizer Characteristics
TA = 25 C, VDD = 3.0 V if nothing else is stated. All measurement results are obtained using [1] and [2]. Min figures are given
using a 27 MHz crystal. Typ. and max figures are given using a 26 MHz crystal
Parameter
Min
Typ
Max
Unit
Condition/Note
Programmed frequency
resolution
397
FXOSC/2
16
412
Hz
26 - 27 MHz crystal. The resolution (in Hz) is equal for all
frequency bands
Synthesizer frequency
tolerance
±40
ppm
Given by crystal used. Required accuracy (including
temperature and aging) depends on frequency band and
channel bandwidth / spacing
RF carrier phase noise
–92
dBc/Hz
@ 50 kHz offset from carrier
RF carrier phase noise
–92
dBc/Hz
@ 100 kHz offset from carrier
RF carrier phase noise
–92
dBc/Hz
@ 200 kHz offset from carrier
RF carrier phase noise
–98
dBc/Hz
@ 500 kHz offset from carrier
RF carrier phase noise
–107
dBc/Hz
@ 1 MHz offset from carrier
RF carrier phase noise
–113
dBc/Hz
@ 2 MHz offset from carrier
RF carrier phase noise
–119
dBc/Hz
@ 5 MHz offset from carrier
RF carrier phase noise
–129
dBc/Hz
@ 10 MHz offset from carrier
PLL turn-on time
( See Table 26)
72
75
s
Time from leaving the IDLE state until arriving in the RX
state, when not performing calibration. Crystal oscillator
running.
PLL calibration time
685
712
724
s
Calibration can be initiated manually or automatically
before entering or after leaving RX
Table 9: Frequency Synthesizer Parameters
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