參數(shù)資料
型號(hào)： BLF378
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF push-pull power MOS transistor
中文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SOT-262A1, 4 PIN
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 134K
代理商： BLF378
1998 Jul 29
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
List of components class-AB test circuit
(see Figs 12 and 13)
.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C2
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
MKT film capacitor
multilayer ceramic chip capacitor
27 pF, 500 V
C3, C4, C31, C32
3
×
18 pF in
parallel, 500 V
4 to 40 pF
2 to 18 pF
100 pF, 500 V
C5
C6, C30
C7
2222 809 08002
2222 809 09006
C8, C9, C15, C18
C10, C13, C14,
C19, C36
C11, C12
1
μ
F, 63 V
100 nF, 50 V
2222 371 11105
2222 852 47104
multilayer ceramic chip capacitor;
note 1
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
2
×
1 nF in
parallel, 500 V
220
μ
F, 63 V
3
×
33 pF in
parallel, 500 V
2 to 9 pF
1 nF, 500 V
C16, C17
C20
C21
C22, C27, C37,
C38
C23, C26, C35
C24, C25
2222 809 09005
10
μ
F, 63 V
2
×
470 pF in
parallel, 500 V
2
×
10 pF in
parallel + 18 pF,
500 V
2
×
5.6 pF in
parallel, 500 V
5.6 pF, 500 V
C28
C29
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
stripline; note 2
semi-rigid cable; note 3
C33, C34
L1, L3, L22, L24
L2, L23
50
50
4.8
×
80 mm
ext. conductor
length 80 mm
ext. dia 3.6 mm
6
×
24 mm
6
×
14.5 mm
6
×
4.4 mm
6
×
3.2 mm
6
×
15 mm
L4, L5
L6, L7
L8, L9
L10, L11
L12, L13
L14, L17
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
grade 3B Ferroxcube wideband HF
choke
1
3
4
turns enamelled 2 mm copper
wire
43
43
43
43
43
2 in parallel
4312 020 36642
L15, L16
40 nH
space 1 mm
int. dia. 10 mm
leads 2
×
7 mm
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BLF3G21-30 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G21-30,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G21-30112 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BLF3G21-6 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G21-6,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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