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參數(shù)資料
| 型號： | BLF378 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF push-pull power MOS transistor |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A1, 4 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 134K |
| 代理商： | BLF378 |
1998 Jul 29
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
unless otherwise specified
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation T
mb
≤
25
°
C total device; both sections equally loaded
storage temperature
junction temperature
110
±
20
18
500
150
200
V
V
A
W
°
C
°
C
65
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
R
th mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
0.15
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
= 25
°
C.
handbook, halfpage
1
10
1
10
100
(1)
500
ID
(A)
DS
MRA988
(2)
Fig.3 Power derating curves.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
(W)
0
40
80
160
0
400
MGE616
120
300
200
100
Th (
°
C)
(2)
(1)
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參數(shù)描述 |
|---|---|
| BLF3G21-30 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF3G21-30,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF3G21-30112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BLF3G21-6 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF3G21-6,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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