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參數(shù)資料
| 型號： | BLF4G10S-120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 112K |
| 代理商： | BLF4G10S-120 |
1.
Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth
ACPR
600
at 30 kHz resolution bandwidth
[2]
1.2 Features
I
Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an I
Dq
of 850 mA:
N
Load power = 48 W (AV)
N
Gain = 19 dB (typ)
N
Efficiency = 40 % (typ)
N
ACPR
400
=
61 dBc (typ)
N
ACPR
600
=
72 dBc (typ)
N
EVM
rms
= 1.5 % (typ)
I
Easy power control
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
Table 1:
RF performance at T
h
= 25
°
C in a common base class-AB test circuit.
Mode of
operation
(MHz)
(V)
(W)
Typical performance
f
V
DS
P
L
G
p
(dB)
(typ)
19
19
η
D
(%)
ACPR
400
(dBc)
(typ)
-
61
[1]
-
ACPR
600
(dBc)
(typ)
-
72
[2]
-
EVM
rms
(%)
IMD3
(dBc)
(typ)
-
-
31
CW
GSM EDGE 861 to 961 28
2-tone
861 to 961 28
861 to 961 28
120
48 (AV)
120 (PEP) 19
57
40
46
-
1.5
-
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G20-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
| BLF4G20-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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