參數(shù)資料
型號(hào)： BLF4G10S-120
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 3/14頁
文件大小： 112K
代理商： BLF4G10S-120
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 850 mA; P
L
= 120 W (CW); f = 960 MHz.
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°
C
P
L
= 60 W
P
L
= 120 W
Min
Typ
Max
Unit
-
-
0.76
0.65
0.85
0.74
K/W
K/W
Table 6:
T
j
= 25
°
C; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.9 mA
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
Min
65
2.5
2.7
-
27
Typ
-
3.1
3.2
-
30
Max
-
3.5
3.7
3
-
Unit
V
V
V
μ
A
A
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
V
GS
= 15 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state resistance V
GS
= V
GS(th)
+ 6 V;
-
-
-
-
9.0
0.09
300
-
-
nA
S
I
D
= 6 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
C
rs
feedback capacitance
-
2.5
-
pF
Table 7:
Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz.
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
°
C; unless otherwise specified.
Symbol
Parameter
G
p
power gain
IRL
input return loss
η
D
drain efficiency
IMD3
third order intermodulation
distortion
Application information
Conditions
P
L(PEP)
= 120 W
P
L(PEP)
= 120 W
P
L(PEP)
= 120 W
P
L(PEP)
= 120 W
Min
18
-
44
-
Typ
19
8
46
31
Max
-
5
-
27
Unit
dB
dB
%
dBc
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BLF4G20LS-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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