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參數(shù)資料
| 型號： | BLF4G10S-120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 112K |
| 代理商： | BLF4G10S-120 |
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Mounted flat.
[3]
Low ESR.
[4]
Striplines are on a double copper-clad Ultralam 2000 PCB (
ε
r
= 2.5); thickness = 31 mils.
Table 8:
Component Description
C1
C2, C12
C3, C13
C4
C5
C6,C7,C11,
C15
C8
C9
C10
C14
C16
C17
C18
L1
L2
List of components (see
Figure 9
and
Figure 10
)
Value
Dimensions
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
trimmer capacitors (Tekelec)
[1]
30 pF
[1]
47 pF
[1]
300 pF
[1]
6.2 pF
[1]
7.5 pF
[2]
0.8 pF to 8 pF
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
electrolytic capacitor
ferrite bead (long)
3 turn inductor ID 4.5 mm,
Cu-wire diameter 1 mm
4 turn inductor ID 3 mm,
Cu-wire diameter 1 mm
ferrite bead (short)
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
SMD resistor
SMD resistor
metal film resistor
20 nF
10
μ
F; 35 V
[1]
6.8 pF
[1]
5.1 pF
[1]
56 pF
[3]
10
μ
F; 35 V
220
μ
F; 63 V
grade 4S2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
R1
R2
R3
grade 4S2
[4]
Z
0
= 50
[4]
Z
0
= 50
[4]
Z
0
= 25
[4]
Z
0
= 10
[4]
Z
0
= 10
[4]
Z
0
= 25
[4]
Z
0
= 50
[4]
Z
0
= 50
8.2
; 0.1 W
4.7
; 0.1 W
10
; 0.6 W
(W
×
L) 2 mm
×
17.2 mm
(W
×
L) 2 mm
×
25.4 mm
(W
×
L) 5.6 mm
×
17.4 mm
(W
×
L) 16 mm
×
10.2 mm
(W
×
L) 16 mm
×
10.2 mm
(W
×
L) 5.6 mm
×
17.4 mm
(W
×
L) 2 mm
×
25.4 mm
(W
×
L) 2 mm
×
17.2 mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G20-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
| BLF4G20-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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