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| 型號(hào)： | ADUC7032BSTZ-8V-RL |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 60/128頁(yè) |
| 文件大小： | 0K |
| 描述： | IC BATTERY SENSOR PREC 48-LQFP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | MicroConverter® ADuC7xxx |
| 核心處理器： | ARM7 |
| 芯體尺寸： | 16/32-位 |
| 速度： | 20.48MHz |
| 連通性： | LIN，SPI，UART/USART |
| 外圍設(shè)備： | POR，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 9 |
| 程序存儲(chǔ)器容量： | 96KB（48K x 16） |
| 程序存儲(chǔ)器類(lèi)型： | 閃存 |
| RAM 容量： | 1.5K x 32 |
| 電壓 - 電源 (Vcc/Vdd)： | 3.5 V ~ 18 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 2x16b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 105°C |
| 封裝/外殼： | 48-LQFP |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | ADUC7032BSTZ-8V-RLDKR |
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Preliminary Technical Data
ADuC7032
Rev. PrD | Page 37 of 128
CODE EXECUTION TIME FROM SRAM AND FLASH/EE
This chapter describes SRAM and Flash/EE access times during
execution for applications where execution time is critical.
Execution from SRAM
Fetching instructions from SRAM takes one clock cycle as the
access time of the SRAM is 2ns and a clock cycle is 49ns
minimum. However, if the instruction involves reading or
writing data to memory, one extra cycle must be added if the
data is in SRAM, or three cycle if the data is in Flash/EE, one
cycle to execute the instruction and two cycles to get the 32-bit
data from Flash/EE. A control flow instruction, for example a
branch instruction will take one cycle to fetch but also two cycle
to fill the pipeline with the new instructions.
Execution from Flash/EE
Because the Flash/EE width is 16-bit, execution from Flash/EE
cannot be done in one cycle, as from SRAM, when CD bit =0.
Also some dead time is needed before accessing data for any
value of CD bits.
In ARM mode, where instructions are 32 bits, two extra cycles
are needed to fetch any instruction when CD = 0 and in Thumb
mode, where instructions are 16 bits, one extra cycle is needed
to fetch any instruction.
Timing is identical in both modes when executing instructions
that involve using the Flash/EE for data memory. If the
instruction to be executed is a control flow instruction, an extra
cycle is needed to decode the new address of the program
counter and then four cycles are needed to fill the pipe-line. A
data processing instruction involving only core register doesn’t
require any extra clock cycle but if it involves data in Flash/EE,
an extra clock cycle is needed to decode the address of the data
and two cycles to get the 32-bit data from Flash/EE. An extra
cycle must also be added before fetching another instruction.
Data transfer instruction are more complex and are
summarized Table 16.
Table 16: Typical execution cycles in ARM/Thumb mode
Instructions
Fetch
cycles
Dead
time
Data access
LD
2/1
1
2
LDH
2/1
1
LDM/POP
2/1
N
2 x N
STR
2/1
1
2 x 50
s
STRH
2/1
1
50
s
STM/PUSH
2/1
N
2 x N x 50
s
With 1<N≤16, N number of data to load or store in the multiple
load/store instruction.
By default, Flash/EE code execution will be suspended during
any Flash/EE erase or write cycle. A page (512 Bytes) erase cycle
will take 20 ms and a write (16 bits) word command will take
50us. However, the FLASH/EE controller allows Erase/Write
cycles to be aborted, if the ARM core receives an enabled
interrupt during the current FLASH/EE Erase/Write cycle. The
ARM7 can therefore immediately service the interrupt and then
return to repeat the FLASH/EE command. The Abort operation
will typically take 10 clock cycles. If the abort operation is not
feasible, it is possible to run FLASH/EE programming code and
the relevant interrupt routines from SRAM, allowing the core
to service the Interrupt immediately.
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| ADUC7033BSTZ-88 | 功能描述:IC BATT SENSOR PREC 48LQFP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:Impedance Track™ 功能:燃料，電量檢測(cè)計(jì)/監(jiān)控器 電池化學(xué):鋰離子（Li-Ion） 電源電壓:2.4 V ~ 2.6 V 工作溫度:-40°C ~ 85°C 安裝類(lèi)型:表面貼裝 封裝/外殼:20-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:20-TSSOP 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1020 (CN2011-ZH PDF) 配用:BQ27350EVM-ND - BQ27350EVM 其它名稱:296-21665-2 |
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