參數(shù)資料
型號: 29LV160BE
廠商: Fujitsu Limited
英文描述: 16M (2M X 8/1M X 16) BIT
中文描述: 16米(2米x 8/1M × 16)位
文件頁數(shù): 36/59頁
文件大?。?/td> 653K
代理商: 29LV160BE
MBM29LV160TE/BE
-70/90/12
36
t
CH
t
CS
t
WP
t
WHWH1
t
WC
CE
OE
t
RC
Addresses
Data
t
GHWL
t
CE
t
OE
t
WPH
t
DS
t
DH
DQ
7
PD
A0H
D
OUT
D
OUT
WE
555H
PA
PA
t
OH
t
DF
Data Polling
3rd Bus Cycle
t
AS
t
AH
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at word address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the
×
16 mode. (The addresses differ from
×
8 mode.)
Figure 6 Alternate WE Controlled Program Operation Timing Diagram
相關(guān)PDF資料
PDF描述
29LV160B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160B 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
29LV160C-55R 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-70 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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