參數(shù)資料
型號(hào)： 29LV160BE
廠商： Fujitsu Limited
英文描述： 16M (2M X 8/1M X 16) BIT
中文描述： 16米（2米x 8/1M × 16）位
文件頁(yè)數(shù)： 17/59頁(yè)
文件大小： 653K
代理商： 29LV160BE
MBM29LV160TE/BE
-70/90/12
17
Notes: 1. Address bits A
11
to A
19
= X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Tables 2 and 3.
3. RA =Address of the memory location to be read.
PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA =Address of the sector to be erased. The combination of A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will
uniquely select any sector.
4. RD =Data read from location RA during read operation.
PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.
5. SPA=Sector address to be protected. Set sector address (SA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD =Sector protection verify data. Output 01H at protected sector addressed and output 00H at
unprotected sector addresses.
6. The system should generate the following address patterns:
Word Mode: 555H or 2AAH to addresses A
0
to A
10
Byte Mode: AAAH or 555H to addresses A
-1
to A
10
7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*1:This command is valid while Fast Mode.
*2: This command is valid while RESET = V
ID
.
*3: The valid addresses are A
6
to A
0
. The other addresses are “Don’t care”.
*4: The data “00H” is also acceptable.
相關(guān)PDF資料
PDF描述
29LV160B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160B 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
29LV160C-55R 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-70 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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