參數(shù)資料
型號: 29LV160BE
廠商: Fujitsu Limited
英文描述: 16M (2M X 8/1M X 16) BIT
中文描述: 16米(2米x 8/1M × 16)位
文件頁數(shù): 30/59頁
文件大?。?/td> 653K
代理商: 29LV160BE
MBM29LV160TE/BE
-70/90/12
30
2.
AC Characteristics
Read Only Operations Characteristics
Note : Test Conditions:
Output Load:1 TTL gate and 30 pF (MBM29LV160TD/BD-70)
1 TTL gate and 100 pF (MBM29LV160TD/BD-90/12)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
Parameter
Symbols
Description
Test Setup
70
(Note)
90
(Note)
12
(Note)
Unit
JEDEC
Standard
t
AVAV
t
RC
Read Cycle Time
Min.
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output HIGH-Z
Max.
25
30
30
ns
t
GHQZ
t
DF
Output Enable to Output HIGH-Z
Max.
25
30
30
ns
t
AXQX
t
OH
Output Hold Time From Address,
CE or OE, Whichever Occurs First
Min.
0
0
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
20
20
μ
s
t
ELFL
t
ELFH
CE or BYTE Switching Low or High
Max.
5
5
5
ns
2.7 k
3.3 V
IN3064
or Equivalent
6.2 k
C
L
Device
Under
Test
Diodes = IN3064
or Equivalent
Figure 4 Test Conditions
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