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參數(shù)資料
| 型號： | 29LV160BE |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M X 8/1M X 16) BIT |
| 中文描述： | 16米（2米x 8/1M × 16）位 |
| 文件頁數(shù)： | 20/59頁 |
| 文件大?。?/td> | 653K |
| 代理商： | 29LV160BE |
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MBM29LV160TE/BE
-70/90/12
20
written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command
during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the
erase operation.
Writing the Erase Resume command resumes the erase operation. The addresses are “DON’T CARES” when
writing the Erase Suspend or Erase Resume commands.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “t
SPD
” to suspend the erase operation. When the devices have entered the erase-suspended mode, the
RY/BY output pin and the DQ
7
bit will be at logic “1”, and DQ
6
will stop toggling. The user must use the address
of the erasing sector for reading DQ
6
and DQ
7
to determine if the erase operation has been suspended. Further
writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
2
to toggle. (See the section on DQ
2
.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate com-
mand sequence for Program. This Program mode is known as the erase-suspend-program mode. Again, pro-
gramming in this mode is the same as programming in the regular Program mode except that the data must be
programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ
2
to toggle. The end of the erase-
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ
7
, or the Toggle Bit (DQ
6
)
which is the same as the regular Program operation. Note that DQ
7
must be read from the Program address
while DQ
6
can be read from any address.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29LV160B | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160B | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 29LV160C-55R | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-70 | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-90 | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29LV160BT-90V | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29LV160C-55R | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160DB70EC | 制造商: 功能描述: 制造商:undefined 功能描述: |
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