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參數(shù)資料
| 型號： | 29LV160BE |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M X 8/1M X 16) BIT |
| 中文描述： | 16米（2米x 8/1M × 16）位 |
| 文件頁數(shù)： | 26/59頁 |
| 文件大?。?/td> | 653K |
| 代理商： | 29LV160BE |
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MBM29LV160TE/BE
-70/90/12
26
Table 10 Common Flash Memory Interface Code
Description
A
0
to A
6
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
DQ
0
to DQ
15
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
Query-unique ASCII string
“QRY”
Primary OEM Command Set
2h: AMD/FJ standard type
Address for Primary
Extended Table
Alternate OEM Command
Set (00h = not applicable)
Address for Alternate OEM
Extended Table
V
CC
Min. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
CC
Max. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
PP
Min. voltage
V
PP
Max. voltage
Typical timeout per single
byte/word write 2
N
μ
s
Typical timeout for Min. size
buffer write 2
N
μ
s
Typical timeout per individual
block erase 2
N
m
s
Typical timeout for full chip
erase 2
N
m
s
Max. timeout for byte/word
write 2
N
times typical
Max. timeout for buffer write
2
N
times typical
Max. timeout per individual
block erase 2
N
times typical
Max. timeout for full chip
erase 2
N
times typical
Device Size = 2
N
byte
Flash Device Interface
description
1Ch
0036h
1Dh
1Eh
1Fh
0000h
0000h
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
27h
28h
29h
2Ah
2Bh
2Ch
0015h
0002h
0000h
0000h
0000h
0004h
Max. number of byte in
multi-byte write = 2
N
Number of Erase Block
Regions within device
Description
A
0
to A
6
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Ch
40h
41h
42h
43h
44h
45h
DQ
0
to DQ
15
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
0050h
0052h
0049h
0031h
0031h
0000h
Erase Block Region 1
Information
Erase Block Region 2
Information
Erase Block Region 3
Information
Erase Block Region 4
Information
Query-unique ASCII string
“PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required
1 = Not Required
Erase Suspend
0 = Not Supported
1 = To Read Only
2 = To Read & Write
Sector Protect
0 = Not Supported
X = Number of sectors in per
group
Sector Temporary Unprotect
00 = Not Supported
01 = Supported
Sector Protection Algorithm
Number of Sector for Bank 2
00h = Not Supported
Burst Mode Type
00h = Not Supported
Page Mode Type
00h = Not Supported
46h
0002h
47h
0001h
48h
0001h
49h
4Ah
04h
00h
4Bh
00h
4Ch
00h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29LV160B | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160B | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 29LV160C-55R | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
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| 29LV160BT-90V | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29LV160C-55R | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160C-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV160DB70EC | 制造商: 功能描述: 制造商:undefined 功能描述: |
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