- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F640J5 (Intel Corp.) 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F640J5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器) |
| 中文描述： | 5伏特英特爾StrataFlash存儲器（5V的6400位英特爾的StrataFlash閃速存儲器） |
| 文件頁數(shù)： | 4/53頁 |
| 文件大?。?/td> | 272K |
| 代理商： | 28F640J5 |
第1頁第2頁第3頁當前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
28F320J5/28F640J5
E
4
PRELIMINARY
REVISION HISTORY
Date of
Revision
Version
Description
09/01/97
-001
Original Version
09/17/97
-002
Modifications made to cover sheet
12/01/97
-003
V
CC
/GND Pins Converted to No Connects specification change added
I
CCS
, I
CCD
, I
CCW
, and I
CCE
specification change added
Order Codes specification change added
01/31/98
-004
The
μ
BGA* chip-scale package in Figure 2 was changed to a 52-ball
package and appropriate documentation added. The 64-Mb
μ
BGA
package dimensions were changed in Figure 2. Changed Figure 4 to read
SSOP instead of TSOP.
03/23/98
-005
32-Mbit Intel StrataFlash memory read access time added. The number
of block erase cycles was changed. The write buffer program time was
changed. The operating temperature was changed. A read parameter
was added. Several program, erase, and lock-bit specifications were
changed. Minor documentation changes were made as well. Datasheet
designation changed from Advance Information to Preliminary.
07/13/98
-006
Intel StrataFlash memory 32-Mb
μ
BGA package removed. t
EHEL
read
specification reduced. Table 4 was modified. The Ordering Information
was updated.
12/01/98
-007
Removed 32 Mbit, 100 ns references and ordering information for same.
Provided clearer V
OH
specifications. Provided maximum program/erase
specifications. Added Input Signal Transitions
– Reducing Overshoots
and Undershoots When Using Buffers/Transceivers
to Design
Considerations section.
Name of document changed from Intel
StrataFlash Memory
Technology 32 and 64 Mbit.
05/04/99
-008
Updated CFI Tables, Section 4.2.1
—Section 4.2.7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F400B3 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400BL-TB | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BV-TB | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BX-TB | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F410-100M1 | 4M-BIT (512K X 8) CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640L18 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| 28F640L30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
| 28F640P3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| 28F640W30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F650 | 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。