參數(shù)資料
型號: 28F640J5
廠商: Intel Corp.
英文描述: 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器)
中文描述: 5伏特英特爾StrataFlash存儲器(5V的6400位英特爾的StrataFlash閃速存儲器)
文件頁數(shù): 17/53頁
文件大?。?/td> 272K
代理商: 28F640J5
E
NOTES:
1.
Bus operations are defined in Table 3.
2.
X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Figure 6 and Table 13.
QA = Query database Address.
PA = Address of memory location to be programmed.
3.
ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from status register. See Table 16 for a description of the status register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code.
4.
The upper byte of the data bus (DQ
8
–DQ
15
) during command writes is a “Don’t Care” in x16 operation.
5.
Following the Read Identifier Codes command, read operations access manufacturer, device, block lock, and master lock
codes. See
Read Identifier Codes Command
section for read identifier code data.
6.
If the WSM is running, only DQ
7
is valid; DQ
15
–DQ
8
and DQ
6
–DQ
0
float, which places them in a high-impedance state.
7.
After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing.
8.
The number of bytes/words to be written to the Write Buffer = N + 1, where N = byte/word count argument. Count ranges
on this device for byte mode are N = 00H to N = 1FH and for word mode are N = 0000H to N = 000FH. The third and
consecutive bus cycles, as determined by N, are for writing data into the Write Buffer. The Confirm command (D0H) is
expected after exactly N + 1 write cycles; any other command at that point in the sequence aborts the write to buffer
operation. Please see Figure 7,
Write to Buffer Flowchart
, for additional information.
9.
Programming the write buffer to flash or initiating the erase operation does not begin until a confirm command (D0h) is
issued.
10. If the block is locked, RP# must be at V
HH
to enable block erase or program operations. Attempts to issue a block erase or
program to a locked block while RP# is V
IH
will fail.
11. Either 40H or 10H are recognized by the WSM as the byte/word program setup.
12. If the master lock-bit is set, RP# must be at V
to set a block lock-bit. RP# must be at V
HH
to set the master lock-bit. If the
master lock-bit is not set, a block lock-bit can be set while RP# is V
IH
.
13. If the master lock-bit is set, RP# must be at V
to clear block lock-bits. The clear block lock-bits operation simultaneously
clears all block lock-bits. If the master lock-bit is not set, the Clear Block Lock-Bits command can be done while RP# is V
IH
.
14. Commands other than those shown above are reserved by Intel for future device implementations and should not be used.
15. The Basic Command Set (BCS) is the same as the 28F008SA Command Set or Intel Standard Command Set. The
Scaleable Command Set (SCS) is also referred to as the Intel Extended Command Set.
28F320J5/28F640J5
17
PRELIMINARY
相關(guān)PDF資料
PDF描述
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
28F400BL-TB 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BV-TB 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F400BX-TB 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
28F410-100M1 4M-BIT (512K X 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
28F640W30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F650 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip