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參數(shù)資料
| 型號(hào)： | 28F200B5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 5V的啟動(dòng)塊閃存（5伏引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 38/44頁 |
| 文件大小： | 345K |
| 代理商： | 28F200B5 |
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28F200B5, 28F004/400B5, 28F800B5
E
38
PRELIMINARY
5.10
AC Characteristics
—Write Operations—Commercial and Extended
Temperature
Comm
Extended
#
Sym
Parameter
Note
Min
Max
Min
Max
Unit
W1
t
PHWL
(t
PHEL
)
RP# High Recovery to WE# (CE#) Going
Low
450
450
ns
W2
t
ELWL
(t
WLEL
)
CE# (WE#) Setup to WE# (CE#) Going
Low
0
0
ns
W3
t
WP
Write Pulse Width
9
50
60
ns
W4
t
DVWH
(t
DVEH
)
Data Setup to WE# (CE#) Going High
4
50
60
ns
W5
t
AVWH
(t
AVEH
)
Address Setup to WE# (CE#) Going High
3
50
60
ns
W6
t
WHEH
(t
EHWH
)
CE# (WE#) Hold from WE# (CE#) High
0
0
ns
W7
t
WHDX
(t
EHDX
)
Data Hold from WE# (CE#) High
4
0
0
ns
W8
t
WHAX
(t
EHAX
)
Address Hold from WE# (CE#) High
3
0
0
ns
W9
t
WPH
Write Pulse Width High
V
CC
= 5 V
±
5%
10
10
ns
V
CC
= 5 V
±
10%
20
20
ns
W10 t
PHHWH
(t
PHHEH
)
RP# V
HH
Setup to WE# (CE#) Going High
6,8
100
100
ns
W11 t
VPWH
(t
VPEH
)
V
PP
Setup to WE# (CE#) Going High
5,8
100
100
ns
W12 t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
0
ns
W13 t
QVVL
V
PP
Hold from Valid SRD
5,8
0
0
ns
W14 t
PHBR
Boot Block Lock Delay
7,8
100
100
ns
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC
Characteristics
—Read-Only Operations.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify operations.
3. Refer to command definition table for valid A
IN
. (Table 7)
4. Refer to command definition table for valid D
IN
. (Table 7)
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).
6. For boot block program/erase, RP# should be held at V
HH
or WP# should be held at V
IH
until operation completes
successfully.
7. Time t
PHBR
is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
WP
= t
WLWH
= t
ELEH
= t
WLEH
= t
ELWH
.
10. Write pulse width high (t
) is defined from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low
(whichever goes low first). Hence, t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F200BV-TB | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TB | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F200BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200BL-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BV-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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