參數(shù)資料
型號(hào): 28F200B5
廠商: Intel Corp.
英文描述: 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 5V的啟動(dòng)塊閃存(5伏引導(dǎo)塊閃速存儲(chǔ)器)
文件頁數(shù): 27/44頁
文件大小: 345K
代理商: 28F200B5
E
5.3
T
A
= 25 °C, f = 1 MHz
28F200B5, 28F004/400B5, 28F800B5
27
PRELIMINARY
Capacitance
Symbol
Parameter
Note
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
4
6
8
pF
V
IN
= 0 V
C
OUT
Output Capacitance
4, 7
10
12
pF
V
OUT
= 0 V
1. Sampled, not 100% tested.
5.4
DC Characteristics
—Commercial and Extended Temperature
Temp
Comm
Extended
Sym
Parameter
Note
Typ
Max
Typ
Max Unit
Test Condition
I
IL
Input Load Current
1
±1.0
±1.0
μA
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
± 10
± 10
μA
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
V
CC
= V
CC
Max, CE# = RP# =
BYTE# = WP# = V
IH
V
CC
= V
CC
Max
CE# = RP# = V
CC
± 0.2 V
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
RP# = GND ± 0.2 V
I
CCS
V
CC
Standby Current
1,3
2.0
2.5
mA
130
150
μA
I
CCD
V
CC
Deep Power-Down
Current
1
20
20
μA
I
CCR
V
CC
Read Current
(Word or Byte Mode)
1,5,
6
60
65
mA
CMOS INPUTS
V
CC
= V
CC
Max, CE# = GND,
OE# = V
CC,
f = 10 MHz (5 V),
I
OUT
= 0 mA, Inputs=GND or V
CC
TTL INPUTS
V
CC
= V
CC
Max, CE# = V
IL
,
OE# = V
IH
, f = 10 MHz (5 V),
I
OUT
= 0 mA, Inputs = V
IL
or V
IH
65
70
mA
I
CCW
V
CC
Program Current
1,4
50
50
mA
V
PP
= V
PPH
1 (at 5 V)
(Word or Byte Mode)
45
45
mA
V
PP
= V
PPH
2 (at 12 V)
I
CCE
V
CC
Erase Current
1,4
35
45
mA
V
PP
= V
PPH
1 (at 5 V)
30
40
mA
V
PP
= V
PPH
2
(at 12 V)
I
CCES
V
CC
Erase Susp Current
1,2
10
12.0
mA
CE# = V
IH
, Block Erase Suspend
I
PPS
V
PP
Standby Current
1
± 10
± 15
μA
V
PP
< V
PPH
2
I
PPD
V
PP
Deep Power-Down
Current
1
5.0
10
μA
RP# = GND ± 0.2 V
I
PPR
V
PP
Read Current
1
200
200
μA
V
PP
V
PPH
2
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