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參數(shù)資料
| 型號： | 28F200B5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲器) |
| 中文描述： | 5V的啟動塊閃存（5伏引導(dǎo)塊閃速存儲器） |
| 文件頁數(shù)： | 14/44頁 |
| 文件大?。?/td> | 345K |
| 代理商： | 28F200B5 |
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28F200B5, 28F004/400B5, 28F800B5
E
14
PRELIMINARY
3.1.2
OUTPUT DISABLE
With OE# at a logic-high level (V
), the device
outputs are disabled. Output pins (if available on
the device) DQ
0
–DQ
15
are placed in a high-
impedance state.
3.1.3
STANDBY
Deselecting the device by bringing CE# to a logic-
high level (V
) places the device in standby mode
which
substantially
reduces
consumption. In standby, outputs DQ
0
–DQ
15
are
placed in a high-impedance state independent of
OE#. If deselected during program or erase
operation, the device continues functioning and
consuming active power until the operation
completes.
device
power
3.1.4
WORD/BYTE CONFIGURATION
The 16-bit devices can be configured for either an
8-bit or 16-bit bus width by setting the BYTE# pin
before power-up. This is not applicable to the 8-bit
only E28F004B5.
When BYTE# is set to logic low, the byte-wide
mode is enabled, where data is read and
programmed on DQ
0
–DQ
7
and DQ
15
/A
–1
becomes
the lowest order address that decodes between the
upper and lower byte. DQ
8
–DQ
14
are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode
is enabled, and data is read and programmed on
DQ
0
–DQ
15
.
3.1.5
DEEP POWER-DOWN/RESET
RP# at V
IL
initiates the deep power-down mode,
also referred to as reset mode.
From read mode, RP# going low for time t
PLPH
deselects the memory, places output drivers in a
high-impedance state, and turns off all internal
circuits. After return from power-down, a time t
PHQV
is required until the initial memory access outputs
are valid. A delay (t
PHWL
or t
PHEL
) is required after
return from power-down before a write can be
initiated. After this wake-up interval, normal
operation is restored. The CUI resets to read array
mode, and the status register is set to 80H. This
case is shown in Figure 14A.
If RP# is taken low for time t
PLPH
during a program
or erase operation, the operation will be aborted
and the memory contents at the aborted location
(for a program) or block (for an erase) are no longer
valid, since the data may be partially erased or
written. The abort process goes through the
following sequence: When RP# goes low, the
device shuts down the operation in progress, a
process which takes time t
PLRH
to complete. After
this time t
PLRH
, the part will either reset to read
array mode (if RP# has gone high during t
PLRH
,
Figure 14B) or enter deep power-down mode (if
RP# is still logic low after t
PLRH
, Figure 14C). In
both cases, after returning from an aborted
operation, the relevant time t
PHQV
or t
PHWL
/t
PHEL
must be waited before a read or write operation is
initiated, as discussed in the previous paragraph.
However, in this case, these delays are referenced
to the end of t
PLRH
rather than when RP# goes high.
As with any automated device, it is important to
assert RP# during system reset. When the system
comes out of reset, processor expects to read from
the flash memory. Automated flash memories
provide status information when read during
program or block erase operations. If a CPU reset
occurs with no flash memory reset, proper CPU
initialization may not occur because the flash
memory may be providing status information
instead of array data. Intel
Flash memories allow
proper CPU initialization following a system reset
through the use of the RP# input. In this application,
RP# is controlled by the same RESET# signal that
resets the system CPU.
3.1.6
WRITE
The CUI does not occupy an addressable memory
location. Instead, commands are written into the
CUI using standard microprocessor write timings
when WE# and CE# are low, OE# = V
IH
, and the
proper address and data (command) are presented.
The address and data for a command are latched
on the rising edge of WE# or CE#, whichever goes
high first. Figure 16 illustrates a write operation.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 28F200BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200BL-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BV-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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