參數(shù)資料
型號: 28F200B5
廠商: Intel Corp.
英文描述: 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲器)
中文描述: 5V的啟動塊閃存(5伏引導(dǎo)塊閃速存儲器)
文件頁數(shù): 30/44頁
文件大?。?/td> 345K
代理商: 28F200B5
28F200B5, 28F004/400B5, 28F800B5
E
30
PRELIMINARY
5.5
DC Characteristics
—Automotive Temperature
(Continued)
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
CCR
V
CC
Read Current for
Word or Byte
1,5,6
55
70
mA
TTL
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
50
70
mA
CMOS
V
CC
= V
CC
Max
CE = V
IL
f = 10 MHz (5 V)
5 MHz (3.3 V)
I
OUT
= 0 mA
Inputs = GND ± 0.2 V
or V
CC
± 0.2 V
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
I
CCW
V
CC
Program Current for
Word or Byte
1,4
25
50
mA
20
45
mA
V
PP
= V
PPH
2 (at 12 V)
Program in Progress
I
CCE
V
CC
Erase Current
1,4
22
45
mA
V
PP
= V
PPH
1 (at 5 V)
Block Erase in Progress
18
40
mA
V
PP
= V
PPH
2 (at 12 V)
Block Erase in Progress
I
CCES
V
CC
Erase Suspend
Current
1,2
5
12.0
mA
CE# = V
IH
Block Erase Suspend
V
PP
= V
PPH
1 (at 5 V)
V
PP
V
CC
I
PPS
V
PP
Standby Current
1
± 5
± 15
μA
I
PPD
V
PP
Deep Power-Down
Current
1
0.2
10
μA
RP# = GND ± 0.2 V
I
PPR
V
PP
Read Current
1
50
200
μA
V
PP
>
V
CC
I
PPW
V
PP
Program Current for
Word or Byte
1
13
30
mA
V
PP
= V
PPH
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
8
25
mA
V
PP
= V
PPH
V
PP
= V
PPH
2 (at 12 V)
Program in Progress
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