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參數(shù)資料
| 型號： | 28F020 |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器) |
| 中文描述： | 5伏體擦除閃存（5V的整體擦寫閃速存儲器） |
| 文件頁數(shù)： | 5/47頁 |
| 文件大小： | 758K |
| 代理商： | 28F020 |
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E
28F010/28F020
5
1.0
APPLICATIONS
The Intel 28F010 and 28F020 flash memories
provide nonvolatility along with the capability to
perform over 100,000 electrical chip-erasure/
reprogram cycles. These features make the 28F010
and 28F020 an innovative alternative to disk,
EEPROM, and battery-backed static RAM. Where
periodic updates of code and data tables are
required,
the
28F010
reprogrammability and nonvolatility make them the
obvious and ideal replacements for EPROM.
and
28F020
Primary applications and operating systems stored
in flash eliminate the slow disk-to-DRAM download
process. This results in dramatic enhancement of
performance and substantial reduction of power
consumption
—a consideration particularly important
in portable equipment. Flash memory increases
flexibility with electrical chip erasure and in-system
update capability of operating systems and
application code. With updatable code, system
manufacturers can easily accommodate last-minute
changes as revisions are made.
In diskless workstations and terminals, network
traffic reduces to a minimum and systems are
instant-on. Reliability exceeds that of electro-
mechanical media. Often in these environments,
power interruptions force extended re-boot periods
for all networked terminals. This mishap is no
longer an issue if boot code, operating systems,
communication protocols and primary applications
are flash resident in each terminal.
For embedded systems that rely on dynamic
RAM/disk for main system memory or nonvolatile
backup storage, the 28F010 and 28F020 flash
memories offer a solid state alternative in a minimal
form factor. The 28F010 and 28F020 provide higher
performance, lower power consumption, instant-on
capability, and allows an “eXecute in place” (XIP)
memory hierarchy for code and data table reading.
Additionally, the flash memory is more rugged and
reliable in harsh environments where extreme
temperatures and shock can cause disk-based
systems to fail.
The need for code updates pervades all phases of
a system's life—from prototyping to system
manufacture to after sale service. The electrical
chip-erasure and reprogramming ability of the
28F010 and 28F020 allow in-circuit alterability; this
eliminates unnecessary handling and less reliable
socketed connections, while adding greater test,
manufacture, and update flexibility.
Material and labor costs associated with code
changes increases at higher levels of system
integration—the most costly being code updates
after sale. Code “bugs,” or the desire to augment
system functionality, prompt after sale code
updates. Field revisions to EPROM-based code
requires the removal of EPROM components or
entire boards. With the 28F010 and 28F020, code
updates are implemented locally via an edge
connector, or remotely over a communication link.
For systems currently using a high-density static
RAM/battery configuration for data accumulation,
flash memory's inherent nonvolatility eliminates the
need for battery backup. The concern for battery
failure no longer exists, an important consideration
for portable equipment and medical instruments,
both requiring continuous performance. In addition,
flash memory offers a considerable cost advantage
over static RAM.
Flash memory's electrical chip erasure, byte
programmability and complete nonvolatility fit well
with data accumulation and recording needs.
Electrical chip-erasure gives the designer a “blank
slate” in which to log or record data. Data can be
periodically off-loaded for analysis and the flash
memory erased producing a new “blank slate.”
A high degree of on-chip feature integration
simplifies memory-to-processor interfacing. Figure 3
depicts two 28F020s tied to the 80C186 system
bus. The 228F010 and 28F020 architecture
minimize interface circuitry needed for complete in-
circuit updates of memory contents.
The outstanding feature of the TSOP (Thin Small
Outline Package) is the 1.2 mm thickness. TSOP is
particularly suited for portable equipment and
applications requiring large amounts of flash
memory.
With
extended cycling capability, and true nonvolatility,
the 28F010 and 28F020 offer advantages to the
alternatives: EPROMs, EEPROMs, battery backed
static RAM, or disk. EPROM-compatible read
specifications, straightforward interfacing, and in-
circuit
alterability
offers
flexibility to meet the high standards of today's
designs.
cost-effective
in-system
reprogramming,
designers
unlimited
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