參數(shù)資料
型號(hào): 28F020
廠商: Intel Corp.
英文描述: 5 V Bulk Erase Flash Memory(5V 整體擦寫(xiě)閃速存儲(chǔ)器)
中文描述: 5伏體擦除閃存(5V的整體擦寫(xiě)閃速存儲(chǔ)器)
文件頁(yè)數(shù): 36/47頁(yè)
文件大?。?/td> 758K
代理商: 28F020
28F010/28F020
E
36
4.13
AC Characteristics
—28F020—Read Only Operations
Commercial and Extended Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
RC
Read Cycle Time
90
120
150
ns
t
ELQV
/t
CE
> Chip Enable Access Time
90
120
150
ns
t
AVQV
/t
ACC
Address Access Time
90
120
150
ns
t
GLQV
/t
OE
Output Enable Access Time
35
50
50
ns
t
ELQ
X
/t
LZ
Chip Enable to Output in
Low Z
2, 3
0
0
0
ns
t
EHQZ
Chip Disable to Output in
High Z
2
45
55
55
ns
t
GLQX
/t
OLZ
Output Enable to Output in
Low Z
2, 3
0
0
0
ns
t
GHQZ
/t
DF
Output Disable to Output in
High Z
2
30
30
30
ns
t
OH
Output Hold from Address,
CE#, or OE# Change
1, 2
0
0
0
ns
t
WHGL
Write Recovery Time before
Read
6
6
6
μs
NOTES:
1.
2.
3.
4.
Whichever occurs first.
Sampled, not 100% tested.
Guaranteed by design.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
5.
相關(guān)PDF資料
PDF描述
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F020-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F020G12 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N12 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N-15 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N-90 制造商: 功能描述: 制造商:undefined 功能描述: