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參數(shù)資料
| 型號： | 12CE673 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | HookUp/Lead Wire; Conductor Size AWG:18; No. Strands x Strand Size:65 x 36; Jacket Color:Black; Conductor Material:Copper; Jacket Material:Rubber; Leaded Process Compatible:Yes; Number of Conductors:1; Outer Diameter:0.144" RoHS Compliant: Yes |
| 中文描述： | 8引腳，8位CMOS微控制器與A / D轉(zhuǎn)換器和EEPROM數(shù)據(jù)存儲器 |
| 文件頁數(shù)： | 84/116頁 |
| 文件大?。?/td> | 671K |
| 代理商： | 12CE673 |
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PIC12CE67X
DS40181B-page 84
Preliminary
1998 Microchip Technology Inc.
12.2
DC Characteristics:
PIC12LCE673-04 (Commercial, Industrial)
PIC12LCE674-04 (Commercial, Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating temperature 0C
≤
T
A
≤
+70C (commercial)
–40C
≤
T
A
≤
+85C (industrial)
Min
Typ Max Units
Param
No.
Characteristic
Sym
Conditions
D001
Supply Voltage
V
DD
2.5
-
5.5
V
XT, INTRC, EXTRC and LP osc configuration
(DC - 4 MHz)
Device in SLEEP mode
D002*
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure internal
Power-on Reset
signal
V
DD
rise rate to
ensure internal
Power-on Reset
signal
Supply Current
(Note 2)
V
DR
-
TBD
-
V
D003
V
POR
-
V
SS
-
V
See section on Power-on Reset for details
D004*
S
VDD
TBD
-
-
V/ms See section on Power-on Reset for details
D010
D010B
D010A
I
DD
-
-
TBD
TBD
TBD
TBD
TBD
TBD
mA
mA
μ
A
XT, EXTRC osc configuration
F
OSC
= 4 MHz, V
DD
= 3.0V (Note 4)
INTRC osc configuration
F
OSC
= 4 MHz, V
DD
= 3.0V (Note 5)
LP osc configuration
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT disabled
V
DD
= 3.0V, WDT enabled, –40
°
C to +85
°
C
V
DD
= 3.0V, WDT disabled, 0
°
C to +70
°
C
V
DD
= 3.0V, WDT disabled, –40
°
C to +85
°
C
D020
D021
D021A
Power-down Current
(Note 3)
I
PD
-
-
-
TBD
TBD
TBD
μ
A
μ
A
μ
A
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4: For EXTRC osc configuration, current through Rext is not included. The current through the resistor can be
estimated by the formula Ir = V
DD
/2Rext (mA) with Rext in kOhm.
5: INTRC calibration value is for 4 MHz nominal at 5V, 25
°
C.
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