參數(shù)資料
型號(hào): 12CE673
廠商: Microchip Technology Inc.
英文描述: HookUp/Lead Wire; Conductor Size AWG:18; No. Strands x Strand Size:65 x 36; Jacket Color:Black; Conductor Material:Copper; Jacket Material:Rubber; Leaded Process Compatible:Yes; Number of Conductors:1; Outer Diameter:0.144" RoHS Compliant: Yes
中文描述: 8引腳,8位CMOS微控制器與A / D轉(zhuǎn)換器和EEPROM數(shù)據(jù)存儲(chǔ)器
文件頁數(shù): 81/116頁
文件大?。?/td> 671K
代理商: 12CE673
1998 Microchip Technology Inc.
Preliminary
DS40181B-page 81
PIC12CE67X
12.0
ELECTRICAL CHARACTERISTICS FOR PIC12CE67X
Absolute Maximum Ratings
Ambient temperature under bias............................................................................................................. .–40
°
to +125
°
C
Storage temperature............................................................................................................................. –65
°
C to +150
°
C
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR)...................................................–0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
................................................................................................................ 0 to +7.0V
Voltage on MCLR with respect to V
SS
(Note 2)..................................................................................................0 to +14V
Total power dissipation (Note 1)...........................................................................................................................700 mW
Maximum current out of V
SS
pin ...........................................................................................................................150 mA
Maximum current into V
DD
pin..............................................................................................................................125 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................±
20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by
GPIO pins combined...................................................................................................100 mA
Maximum current sourced by GPIO pins combined..............................................................................................100 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
I
OH
} +
{(V
DD
- V
OH
) x I
OH
} +
(V
O
l x I
OL
).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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