參數(shù)資料
型號： 12CE673
廠商： Microchip Technology Inc.
英文描述： HookUp/Lead Wire; Conductor Size AWG:18; No. Strands x Strand Size:65 x 36; Jacket Color:Black; Conductor Material:Copper; Jacket Material:Rubber; Leaded Process Compatible:Yes; Number of Conductors:1; Outer Diameter:0.144" RoHS Compliant: Yes
中文描述： 8引腳，8位CMOS微控制器與A / D轉換器和EEPROM數(shù)據存儲器
文件頁數(shù)： 83/116頁
文件大?。?/td> 671K
代理商： 12CE673
1998 Microchip Technology Inc.
Preliminary
DS40181B-page 83
PIC12CE67X
12.1
DC Characteristics:
PIC12CE673-04 (Commercial, Industrial, Extended
(5)
)
PIC12CE673-10 (Commercial, Industrial, Extended
(5)
)
PIC12CE674-04 (Commercial, Industrial, Extended
(5)
)
PIC12CE674-10 (Commercial, Industrial, Extended
(5)
)
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4: For EXTRC osc configuration, current through Rext is not included. The current through the resistor can be
estimated by the formula Ir = V
DD
/2Rext (mA) with Rext in kOhm.
5: Extended operating range is Advance Information for this device.
6: INTRC calibration value is for 4 MHz nominal at 5V, 35
°
C.
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating temperature
0C
≤
T
A
≤
+70C (commercial)
–40C
≤
T
A
≤
+85C (industrial)
–40
°
C
≤
T
A
≤
+125C (extended)
Sym Min
Typ Max Units
Parm
No.
D001
Characteristic
Conditions
D001A
D002
Supply Voltage
V
DD
3.0
4.5
-
-
-
5.5
5.5
-
V
V
V
XT, INTRC, EXTRC and LP osc configura-
tion
HS osc configuration
Device in SLEEP mode
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure internal Power-on
Reset signal
V
DD
rise rate to ensure inter-
nal Power-on Reset signal
Supply Current (Note 2)
No read/write to EEPROM
peripheral
V
DR
1.5
D003
V
PO
R
V
SS
-
V
SS
V
See section on Power-on Reset for details
D004
S
VD
D
0.05
-
-
V/ms See section on Power-on Reset for details
D010
D010A
D013
I
DD
-
-
2.7
2.7
TBD
3.3
3.3
15
mA
mA
mA
XT, EXTRC osc configuration
(PIC12CE67X-04)
F
OSC
= 4 MHz, V
DD
= 5.5V (Note 4)
INTRC osc configuration
F
OSC
= 4 MHz, V
DD
= 5.5V (Note 6)
HS osc configuration (PIC12CE67X-10)
F
OSC
= 10 MHz, V
DD
= 5.5V
V
DD
= 5.5V
SCL = 400 kHz
D028
I
EE
0.1
0.2
D020
D021
D021A
D021B
Power-down Current (Note 3) I
PD
-
-
-
-
5.5
1.5
1.5
1.5
32
16
14
TBD
μ
A
μ
A
μ
A
μ
A
V
DD
= 4.0V, WDT enabled, –40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled, 0
°
C to +70
°
C
V
DD
= 4.0V, WDT disabled, –40
°
C to
+85
°
C
V
DD
= 4.0V, WDT disabled, –40
°
C to
+125
°
C
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