參數(shù)資料
型號: W9751G6JB-25A
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝: 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
文件頁數(shù): 36/86頁
文件大?。?/td> 1030K
代理商: W9751G6JB-25A
W9751G6JB
Publication Release Date: Mar. 10, 2010
- 41 -
Revision A02
IDD4R
Operating Burst Read Current
All banks open, Continuous burst reads, IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
130
110
100
mA
1,2,3,4,5,
6
IDD4W
Operating Burst Write Current
All banks open, Continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
135
115
105
mA
1,2,3,4,5,
6
IDD5B
Burst Refresh Current
tCK = tCK(IDD);
Refresh command every tRFC(IDD) interval;
CKE is HIGH, CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
100
90
85
mA
1,2,3,4,5,
6
IDD6
Self Refresh Current
CKE 0.2 V, external clock off, CLK and CLK at 0 V;
Other control and address inputs are FLOATING;
Data bus inputs are FLOATING.
6
mA
1,2,3,4,5,
6
IDD7
Operating Bank Interleave Read Current
All bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD(IDD) - 1 x tCK(IDD);
tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD =
tRCD(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during deselects;
Data Bus inputs are SWITCHING.
210
200
180
mA
1,2,3,4,5,
6
Notes:
1. VDD = 1.8 V
± 0.1V; VDDQ = 1.8 V± 0.1V.
2. IDD specifications are tested after the device is properly initialized.
3. Input slew rate is specified by AC Parametric Test Condition.
4. IDD parameters are specified with ODT disabled.
5. Data Bus consists of DQ, LDM, UDM, LDQS, LDQS , UDQS and UDQS .
6. Definitions for IDD
LOW = Vin VIL (ac) (max)
HIGH = Vin VIH (ac) (min)
STABLE = inputs stable at a HIGH or LOW level
FLOATING = inputs at VREF = VDDQ/2
SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
相關PDF資料
PDF描述
W9751G8JB-18 DDR DRAM, PBGA84
W9812G21H-6I 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
W9812G21H-6C 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
W9812G6JH-6 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
W986416AH-10 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
相關代理商/技術參數(shù)
參數(shù)描述
W9751G6JB-3 制造商:Winbond Electronics Corp 功能描述:512MB DDRII
W9751G6KB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6KB-18 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9751G6KB-25 功能描述:IC DDR2 SDRAM 512MBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G(256M x 16) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9751G6KB25A 制造商:WINBOND 制造商全稱:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle