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參數(shù)資料
| 型號： | W9751G6JB-25A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| 封裝： | 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 |
| 文件頁數(shù)： | 18/86頁 |
| 文件大?。?/td> | 1030K |
| 代理商： | W9751G6JB-25A |
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W9751G6JB
Publication Release Date: Mar. 10, 2010
- 25 -
Revision A02
Therefore the Burst Stop command is not supported on DDR2 SDRAM devices.
Table 3—Burst Length and Sequence
Burst Length
Starting Address
(A2 A1 A0)
Sequential Addressing
(decimal)
Interleave Addressing
(decimal)
x00
0, 1, 2, 3
x01
1, 2, 3, 0
1, 0, 3, 2
x10
2, 3, 0, 1
4
x11
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
8
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
7.4.3
Burst read mode operation
Burst Read is initiated with a READ command. The address inputs determine the starting column
address for the burst. The delay from the start of the command to when the data from the first cell
appears on the outputs is equal to the value of the read latency (RL). The data strobe output (DQS) is
driven LOW one clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst
is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on
the DQ pin in phase with the DQS signal in a source synchronous manner. The RL is equal to an
additive latency (AL) plus CAS Latency (CL). The CL is defined by the Mode Register Set (MRS). The
AL is defined by the Extended Mode Register EMR (1). (Example timing waveforms refer to 10.7 and
10.8 Data output (read) timing and Burst read operation diagram in Chapter 10)
7.4.4
Burst write mode operation
Burst Write is initiated with a WRITE command. The address inputs determine the starting column
address for the burst. Write Latency (WL) is defined by a Read Latency (RL) minus one and is equal
to (AL + CL -1); and is the number of clocks of delay that are required from the time the write
command is registered to the clock edge associated to the first DQS strobe. A data strobe signal
(DQS) should be driven LOW (preamble) nominally half clock prior to the WL. The first data bit of the
burst cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble.
The tDQSS specification must be satisfied for each positive DQS transition to its associated clock edge
during write cycles. The subsequent burst bit data are issued on successive edges of the DQS until
the burst length is completed, which is 4 or 8 bit burst. When the burst has finished, any additional
data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst write operation is
complete. The time from the completion of the burst write to bank precharge is the write recovery time
(WR). (Example timing waveforms refer to 10.9 and 10.10 Data input (write) timing and Burst write
operation diagram in Chapter 10)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9751G6JB-3 | 制造商:Winbond Electronics Corp 功能描述:512MB DDRII |
| W9751G6KB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6KB-18 | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9751G6KB-25 | 功能描述:IC DDR2 SDRAM 512MBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W9751G6KB25A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle |
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