參數(shù)資料
型號： W9751G6JB-25A
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
文件頁數(shù)： 10/86頁
文件大小： 1030K
代理商： W9751G6JB-25A
W9751G6JB
Publication Release Date: Mar. 10, 2010
- 18 -
Revision A02
7.2.4
On-Die Termination (ODT)
On-Die Termination (ODT) is a new feature on DDR2 components that allows a DRAM to turn on/off
termination resistance for each DQ, UDQS/ UDQS , LDQS/ LDQS , UDM and LDM signal via the ODT
control pin. UDQS and LDQS are terminated only when enabled in the EMR (1) by address bit A10 =
0. The ODT feature is designed to improve signal integrity of the memory channel by allowing the
DRAM controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT function can be used for all active and standby modes. ODT is turned off and not supported
in Self Refresh mode. (Example timing waveforms refer to 10.3, 10.4 ODT Timing for
Active/Standby/Power Down Mode and 10.5, 10.6 ODT timing mode switch at entering/exiting power
down mode diagram in Chapter 10)
DRAM
Input
Buffer
Input
Pin
VDDQ
sw1
Rval3
VDDQ
sw2
sw3
Rval1
Rval2
Rval1
Rval2
Rval3
sw1
sw2
sw3
VSSQ
Switch (sw1, sw2, sw3) is enabled by ODT pin.
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR (1).
Termination included on all DQs, DM, DQS, DQS pins.
Figure 9—Functional Representation of ODT
7.2.5
ODT related timings
7.2.5.1
MRS command to ODT update delay
During normal operation the value of the effective termination resistance can be changed with an
EMRS command. The update of the Rtt setting is done between tMOD,min and tMOD,max, and CKE
must remain HIGH for the entire duration of tMOD window for proper operation. The timings are shown
in the following timing diagram.
相關(guān)PDF資料
PDF描述
W9751G8JB-18 DDR DRAM, PBGA84
W9812G21H-6I 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
W9812G21H-6C 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
W9812G6JH-6 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
W986416AH-10 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9751G6JB-3 制造商:Winbond Electronics Corp 功能描述:512MB DDRII
W9751G6KB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6KB-18 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9751G6KB-25 功能描述:IC DDR2 SDRAM 512MBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9751G6KB25A 制造商:WINBOND 制造商全稱:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
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