參數(shù)資料
型號: W19B160BTBBM
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 16 FLASH 2.7V PROM, 11 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
文件頁數(shù): 16/48頁
文件大?。?/td> 534K
代理商: W19B160BTBBM
W19B160BT/B DATA SHEET
Publication Release Date:Jan.04, 2008
- 23 -
Revision A5
8.7
Primary Vendor-Specific Extended Query
DESCRIPTION
ADDRESS
(WORD MODE)
DATA
ADDRESS
( BYTE MODE)
Query-unique ASCII string "PRI"
40h
41h
42h
0050h
0052h
0049h
80h
82h
84h
Major version number, ASCII
43h
0031h
86h
Minor version number, ASCII
44h
0030h
88h
Address sensitive unlock
0 = Required, 1 = Not required
45h
0000h
8Ah
Erase Suspend
00 = Not supported, 01=Supported
46h
0000h
8Ch
Sector protect
0 = Not supported, X=number of sectors in per group
47h
0001h
8Eh
Sector Temporary Unprotect
00 = Not supported, 01=Supported
48h
0001h
90h
Sector protect/unprotect scheme
00 = Not supported, 01=Supported
49h
0001h
92h
Simultaneous operation
00 = Not supported, 01=Supported
4Ah
0000h
94h
Burst mode type
00 = Not supported, 01=Supported
4Bh
0000h
96h
Page mode type
00 = Not Supported, 01=4 Word Page, 02=8 Word
Page
4Ch
0000h
98h
相關(guān)PDF資料
PDF描述
W7MG21M32SVB70BNC 2M X 32 FLASH 3.3V PROM MODULE, 70 ns, SMA80
W3EG7264S202AD4 DDR DRAM MODULE, DMA200
W3E232M16S-200STIG 64M X 16 DDR DRAM, 0.7 ns, PDSO66
W3E232M16S-400STI 64M X 16 DDR DRAM, 0.7 ns, PDSO66
W3EG6418S263D3 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W19B160BTBH7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTBM7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTT7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation
W19B160TB7H7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160TB7M7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory