參數(shù)資料
型號: W19B160BTBBM
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 16 FLASH 2.7V PROM, 11 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
文件頁數(shù): 14/48頁
文件大?。?/td> 534K
代理商: W19B160BTBBM
W19B160BT/B DATA SHEET
Publication Release Date:Jan.04, 2008
- 21 -
Revision A5
8.4
CFI Query Identification String
DESCRIPTION
ADDRESS
(WORD MODE)
DATA
ADDRESS
(BYTE MODE)
Query-unique ASCII string "QRY"
10h
11h
12h
0051h
0052h
0059h
20h
22h
24h
Primary OEM Command Set
13h
14h
0002h
0000h
26h
28h
Address for Primary Extended Table
15h
16h
0040h
0000h
2Ah
2Ch
Alternate OEM Command Set (00h=none exists)
17h
18h
0000h
2Eh
30h
Address for Alternate OEM Extended Table (00h=none
exists)
19h
1Ah
0000h
32h
34h
8.5
System Interface String
DESCRIPTION
ADDRESS
(WORD MODE)
DATA
ADDRESS
(BYTE MODE)
VDD Min. (write/erase)
D7-D4: volt , D3-D0: 100 mV
1Bh
0027h
36h
VDD Max. (write/erase)
D7-D4: volt , D3-D0: 100 mV
1Ch
0036h
38h
VPP Min. voltage (00h=no Vpp pin present)
1Dh
0000h
3Ah
VPP Max. voltage (00h=no Vpp pin present)
1Eh
0000h
3Ch
Typical timeout per single byte/word write 2N
S
 
1Fh
0004h
3Eh
Typical timeout for Min. size buffer write 2N
S (00h=not
 
supported)
20h
0000h
40h
Typical timeout per individual block erase 2N mS
21h
000Ah
42h
Typical timeout for full chip erase 2N mS (00h=not
supported)
22h
0000h
44h
Max. timeout for byte/word write 2N times typical
23h
0005h
46h
Max. timeout for buffer write 2N times typical
24h
0000h
48h
Max. timeout per individual block erase 2N times typical
25h
0004h
4Ah
Max. timeout full chip erase 2N times typical ( 00h = not
supported)
26h
0000h
4Ch
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