參數(shù)資料
型號(hào)： V54C316162VB
廠商： Mosel Vitelic, Corp.
英文描述： High Performance 3.3 Volt 1M X 16 Synchronous DRAM(3.3V高性能1Mx16同步動(dòng)態(tài)RAM)
中文描述： 高性能3.3伏100萬(wàn)× 16同步DRAM（3.3V的高性能1Mx16同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 5/61頁(yè)
文件大?。?/td> 571K
代理商： V54C316162VB
5
V54C316162VB Rev. 1.0 July 1998
MOSEL V ITELIC
V54C316162VB
Operation Definition
All of SDRAM operations are defined by states of
control signals CS, RAS, CAS, WE, and DQM at the
positive edge of the clock. The following list shows
the most important operation commands.
Mode Register
For application flexibility, a CAS latency, a burst
length, and a burst sequence can be programmed in
the SDRAM mode register. The mode set operation
must be done before any activate command after
the initial power up. Any content of the mode register
can be altered by re-executing the mode set com-
mand. Both banks must be in precharged state and
CKE must be high at least one clock before the
mode set operation. After the mode register is set, a
Standby or NOP command is required. Low signals
of RAS, CAS, and WE at the positive edge of the
clock activate the mode set operation. Address input
data at this timing defines parameters to be set as
shown in the following table.
Operation
CS
RAS
CAS
WE
(L/U)DQM
Standby, Ignore RAS, CAS, WE and Address
H
X
X
X
X
Row Address Strobe and Activating a Bank
L
L
H
H
X
Column Address Strobe and Read Command
L
H
L
H
X
Column Address Strobe and Write Command
L
H
L
L
X
Precharge Command
L
L
H
L
X
Burst Stop Command
L
H
H
L
X
Self Refresh Entry
L
L
L
H
X
Mode Register Set Command
L
L
L
L
X
Write Enable/Output Enable
X
X
X
X
L
Write Inhibit/Output Disable
X
X
X
X
H
No Operation (NOP)
L
H
H
H
X
相關(guān)PDF資料
PDF描述
V54C316162 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-5 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-55 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-6 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-7 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C316162VC 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-5 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-55 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-6 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-7 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
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