參數(shù)資料
型號(hào)： V54C316162VB
廠商： Mosel Vitelic, Corp.
英文描述： High Performance 3.3 Volt 1M X 16 Synchronous DRAM(3.3V高性能1Mx16同步動(dòng)態(tài)RAM)
中文描述： 高性能3.3伏100萬(wàn)× 16同步DRAM（3.3V的高性能1Mx16同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 3/61頁(yè)
文件大?。?/td> 571K
代理商： V54C316162VB
MOSEL V ITELIC
V54C316162VB
3
V54C316162VB Rev. 1.0 July 1998
Absolute Maximum Ratings*
Ambient Temperature
Under Bias................................... –10
Storage Temperature (plastic)......... -55 to +125
Input/Output Voltage...-0.5 to Min (V
Voltage Relative to V
SS
.................. -1.0V to +4.6 V
Data Output Current .....................................50 mA
Power dissipation ..........................................1.0 W
°
C to +80
°
°
C
C
CC
+0.5, 4.6) V
*
Note:
Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
= 0 to 70
°
C, V
CC
= 3.3 V
±
0.3 V, f = 1 Mhz
*
Note:
Capacitance is sampled and not 100% tested.
Symbol
Parameter
Max. Unit
C
I1
Input Capacitance (A0 to A11)
4
pF
C
I2
Input Capacitance
RAS, CAS, WE, CS, CLK, CKE, DQM
4
pF
C
IO
Output Capacitance (I/O)
5
pF
Block Diagram
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
Data Latches
Data Latches
8
16
Column Decoder and DQ Gate
Sense Amplifiers
D
16
CKE Buffer
CLK Buffer
CS Buffer
RAS Buffer
CAS Buffer
WE Buffer
DQM Buffer
CKE
CLK
CS
RAS
CAS
DQM
WE
C
Mode Register
RefrSelf
Row
Address
Counter
A2
A3
A4
A5
A6
A7
A8
A9
A10
A1
A11 (BS)
12
12
Sequential
Control
Bank A
Row/Column
Select
Bank A
Predecode A
Sequential
Control
Bank B
Predecode B
16
A
Row/Column
Select
Bank B
3
11
3
11
11
Data Latches
16
Column Decoder and I/O Gate
Sense Amplifiers
2
Memory Bank B
2048 x 1024
2048
R
R
16
16
16
16
16
16
16
1
2
Memory Bank A
2048 x 256
2048
R
R
I/O
16
相關(guān)PDF資料
PDF描述
V54C316162 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-5 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-55 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-6 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-7 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C316162VC 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-5 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-55 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-6 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
V54C316162VC-7 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*