參數(shù)資料
型號: TPS65800RTQTG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 電源管理
英文描述: 8-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC56
封裝: 8 X 8 MM, GREEN, PLASTIC, QFN-56
文件頁數(shù): 6/98頁
文件大?。?/td> 2077K
代理商: TPS65800RTQTG4
www.ti.com
ELECTRICAL CHARACTERISTICS – SWITCHED MODE SM2 STEP DOWN CONVERTER
ELECTRICAL CHARACTERISTICS – GPIOs
SLVS606C – SEPTEMBER 2005 – REVISED FEBRUARY 2007
Over recommended operating conditions (typical values at T
J = 25°C), VO(SM1) = 1.24 V, application circuit as in Figure 3
(unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
IQ(SM2) = I(VIN_ SM2), no output load, not switching
10
20
IQ(SM2)
Quiescent current for SM2
A
SM2 OFF, set via I2C
0.1
IO(SM2)
Output current range
600
mA
Available output
voltages: VO(SM2)TYP = 1
Output voltage, selectable via I2C, standby OFF
V to 3.4 V, adjustable in
80 mV steps
V
Available output
VO(SM2) = VSBY(SM2), output voltage range, standby
voltages: VSBY(SM2) = 1
ON
V to 3.4 V, adjustable in
80-mV steps
VO(SM2)
Output voltage
Total accuracy, VO(SM2)TYP = VSM2(SBY) = 1.8 V,
V(VIN_SM2) = greater of [3 V or (VO(SM2) + 0.3 V)]
–3%
3%
to 4.7 V; 0 mA
≤ I
O(SM2)≤ 600 mA
Line regulation, V(VIN_SM2) = greater of
%/V
[3 V or (VO(SM2) + 0.3 V)]
0.027
to 4.7 V; 0 mA
≤ I
O(SM2)≤ 600 mA
Load regulation, V(VIN_SM2) = 4.7 V,
0.139
%/A
IO(SM2): 60 mA → 540 mA
P-channel MOSFET
RDSON(PSM2)
V(VIN_SM2) = 3.6 V, 100% duty cycle set
310
500
m
on-resistance
ILKG(PSM2)
P-channel leakage current
0.1
A
N-channel MOSFET
RDSON(NSM2)
V(VIN_SM2) = 3.6 V, 0% duty cycle set
220
330
m
on-resistance
ILKG(PSM2)
N-channel leakage current
5
A
ILIM(SM2)
P- and N- channel current limit
3 V < V(VIN_SM2) < 4.7 V
900
1050 1200
mA
fS(SM2)
Oscillator frequency
PWM mode set
1.3
1.5
1.7
MHz
V(VIN_SM2) = 4.2 V, IO(SM2) = 300 mA,
EFF(SM2)
Efficiency
92%
VO(SM2) = 3 V
Converter OFF
→ON, V
O(SM2) : 5% → 95% of target
tSS(SM2)
Soft start ramp time
750
value
s
GPIO2 pin programmed as SM2 converter enable
tDLY(SM2)
Converter turn-on delay
170
control. Measured from V(GPIO2): LO
→ HI
Over recommended operating conditions (typical values at T
J = 25°C), application circuit as in Figure 3 (unless otherwise
noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GPIO1–3
VOL
Low level output voltage GPIO0
IOL = 20 mA
0.5
V
IOGPIO
Low level sink current into GPIO1, 2, 3
V(GPIOn) = V(OUT)
20
mA
VIL
Low level input voltage
0.4
V
ILKG(GPIO)
Input leakage current
V(GPIOn) = V(OUT)
1
A
14
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