參數(shù)資料
型號(hào): STR912FAW32H6T
廠商: 意法半導(dǎo)體
英文描述: ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
中文描述: ARM966E -虜⑩16/32位閃存微控制器與以太網(wǎng),USB,加拿大,交流電機(jī)控制,4個(gè)定時(shí)器,模數(shù)轉(zhuǎn)換器,RTC和DMA的
文件頁數(shù): 70/99頁
文件大小: 979K
代理商: STR912FAW32H6T
Electrical characteristics
STR91xFAx32 STR91xFAx42 STR91xFAx44
70/99
7.9.3
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
7.9.4
Electro-static discharge (ESD)
Electro-Static Discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
7.9.5
Static latch-up
Two complementary static tests are required on 10 parts to assess the latch-up
performance.
A supply overvoltage (applied to each power supply pin) and
A current injection (applied to each input, output and configurable I/O pin) are
performed on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
7.9.6
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials:
Table 28.
ESD data
Symbol
Ratings
Conditions
Class
Maximum
value
(1)
Unit
V
ESD(HBM)
Electro-static discharge voltage
(Human Body Model)
T
A
=
+25°C
conforming to
JESD22-A114
2
+/-2000
V
V
ESD(CDM)
Electro-static discharge voltage
(Charged Device Model)
T
A
=
+25°C
conforming to
JESD22-C101
II
1000
1.
Data based on characterization results, not tested in production.
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