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| 型號： | STR912FAW32H6T |
| 廠商： | 意法半導體 |
| 英文描述： | ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
| 中文描述： | ARM966E -虜⑩16/32位閃存微控制器與以太網(wǎng)，USB，加拿大，交流電機控制，4個定時器，模數(shù)轉(zhuǎn)換器，RTC和DMA的 |
| 文件頁數(shù)： | 69/99頁 |
| 文件大小： | 979K |
| 代理商： | STR912FAW32H6T |
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STR91xFAx32 STR91xFAx42 STR91xFAx44
Electrical characteristics
69/99
7.9
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
7.9.1
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
ESD
: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB
: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD,
V
DDQ
and V
SS
through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
●
●
A device reset allows normal operations to be resumed.
7.9.2
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 26.
EMS data
Symbol
Parameter
Conditions
Severity/
Criteria
(1)
Unit
V
FESD
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
V
DD
=1.8V, V
DDQ
=3.3V, T
A
=+25°C,
f
OSC
/f
CPUCLK
=4 MHz/96MHz PLL
1B
kV
V
FFTB
Fast transient voltage burst limits
to be applied through 100pF on
V
DD
and V
DDQ
pins to induce a
functional disturbance
V
DD
=1.8V, V
DDQ
=3.3V, T
A
=+25°C,
f
OSC
/f
CPUCLK
=4 MHz/96 MHz PLL
conforms to IEC 1000-4-4
4A
1.
Data based on characterization results, not tested in production.
Table 27.
EMI data
Symbo
l
Parameter
Conditions
Monitored
Frequency Band
Max vs.
[f
OSC
/f
CPUCLK
]
Unit
24 MHz /
48 MHz
(1)
24 MHz /
96 MHz
(1)
S
EMI
Peak level
V
DDQ
=
3.3V, V
DD
=
1.8V,
T
A
=
+25°C,
LQFP128 package
(2)
conforming to SAE J
1752/3
0.1MHz to 30 MHz
14
10
dB
μ
V
30 MHz to 130
MHz
18
19
130 MHz to 1GHz
18
22
SAE EMI Level
4
4
-
1.
Data based on characterization results, not tested in production.
2.
BGA and LQFP devices have similar EMI characteristics.
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相關代理商/技術(shù)參數(shù) |
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| STR912FAW32X6 | 功能描述:ARM微控制器 - MCU ARM7TDMI 32-Bit Flash Based MCU RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT |
| STR912FAW32X6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
| STR912FAW34H6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
| STR912FAW34X6 | 功能描述:ARM微控制器 - MCU ARM966E S 16/32B Flash MCU RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT |
| STR912FAW34X6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
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