參數(shù)資料
型號: STR912FAW32H6T
廠商: 意法半導(dǎo)體
英文描述: ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
中文描述: ARM966E -虜⑩16/32位閃存微控制器與以太網(wǎng),USB,加拿大,交流電機(jī)控制,4個定時器,模數(shù)轉(zhuǎn)換器,RTC和DMA的
文件頁數(shù): 63/99頁
文件大小: 979K
代理商: STR912FAW32H6T
STR91xFAx32 STR91xFAx42 STR91xFAx44
Electrical characteristics
63/99
7.6
Supply current characteristics
V
DDQ
= 2.7 - 3.6V, V
DD
= 1.65 - 2V, T
A
= -40 / 85 °C unless otherwise specified.
Table 16.
Figure 15.
Sleep mode current vs temperature with LVD on
Supply current characteristics
Symbol
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
I
DDRUN
Run Mode Current
All peripherals
on
CPU_CLK =
96 MHz
(1)(2)
1.
ARM core and peripherals active with all clocks on. Power can be conserved by turning off clocks to
peripherals which are not required.
2.
mA/MHz data valid down to 10 MHz. Below this frequency the ratio mA/MHz increases.
1.7
2.3
mA/MHz
All peripherals
off
1.3
1.6
I
IDLE
Idle Mode Current
All peripherals on
(2)(3)
3.
ARM core stopped and all peripheral clocks active.
1.14
1.7
mA/MHz
All peripherals off
(2)(4)
4.
ARM core stopped and all peripheral clocks stopped.
0.45
0.75
mA/MHz
I
SLEEP(IDD)
Sleep Mode
Current, I
DD
LVD On
(5)
55
825
μA
LVD Off
(5)
5.
ARM core and all peripheral clocks stopped (with exception of RTC)
50
820
μA
I
SLEEP(IDDQ)
Sleep Mode
Current, I
DDQ
LVD On
(4)
7
TBD
μA
LVD Off
(4)
7
TBD
μA
I
RTC_STBY
RTC Standby
Current
Measured on VBATT pin
0.9
1.2
μA
I
SRAM_STBY
SRAM Standby
Current
Measured on VBATT pin
5
240
μA
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
20
40
60
80
100
120
-20
-40
I
TEMP [°C]
Vcc = 1.8 V and
standard process
Vcc = 2.0 V
and corner process
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