參數(shù)資料
型號(hào)： STH10NC60
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
中文描述： N溝道600V的- 0.6ohm - 10A條- TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
文件頁數(shù)： 2/16頁
文件大?。?/td> 255K
代理商： STH10NC60
STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI
2/16
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
10A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance notonly the device’s
ESD capability,but also to makethem safely absorb possible voltage transients that may occasionally be
applied fromgate to souce. In this respect the Zenervoltage is appropriateto achieve anefficient and cost-
effective interventionto protect the device’s integrity.These integratedZener diodes thusavoid theusage
of external components.
Parameter
Value
Unit
TO-220/
D
2
PAK/I
2
PAK
TO-220FP
ISOWATT218
TO-247
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
30
V
10
10 (*)
10 (*)
10
A
5.7
5.7 (*)
5.7 (*)
5.7
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
36
36 (*)
36 (*)
36
A
115
35
35
156
W
0.92
0.28
0.28
1.25
W/
°
C
V
V
ESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
4000
dv/dt (1)
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
2000
-
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
°
C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
ISOWATT
218
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case
Max
1.09
3.6
0.8
°
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient
Max
60
°
C/W
Rthj-amb
62.5
50
°
C/W
T
l
Maximum Lead Temperature For
Soldering Purpose
300
°
C
Parameter
Max Value
9
Unit
A
300
mJ
Parameter
Test Conditions
Igs=
±
1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
(*) Limited only by maximum temperature allowed
相關(guān)PDF資料
PDF描述
STH10NC60FI N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
STH11020 TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA
STH11022 TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA
STI2002 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | TO-92
STI2003 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:30pF; Holding Current:150mA; Leakage Current:5uA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STH10NC60FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
STH10NK60ZFI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-218VAR
STH11020 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA
STH11022 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA
STH110N10F7-2 功能描述:MOSFET N-Ch 100V 6mOhm 110A STripFET VII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*