參數(shù)資料
型號(hào)： STH10NC60FI
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
中文描述： N溝道600V的- 0.6ohm - 10A條- TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 255K
代理商： STH10NC60FI
1/16
April 2002
STP10NK60Z/FP, STB10NK60Z/-1
STH10NK60ZFI, STW10NK60Z
N-CHANNEL600V-0.65
-10ATO-220/FP/D
2
PAK/I
2
PAK/TO-247/ISOWATT218
Zener-Protected SuperMESH
Power MOSFET
I
TYPICAL R
DS
(on) = 0.65
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH
series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH
layout. In addition to pushing
on-resistance significantlydown, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh
products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
I
LIGHTING
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STB10NK60Z
STB10NK60Z-1
STH10NK60ZFI
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
600 V
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
10 A
10 A
10 A
10 A
10 A
10 A
115 W
115 W
35 W
115 W
35 W
156 W
MARKING
PACKAGE
PACKAGING
STP10NK60Z
P10NK60Z
TO-220
TUBE
STP10NK60ZFP
P10NK60ZFP
TO-220FP
TUBE
STB10NK60ZT4
B10NK60Z
D
2
PAK
TAPE & REEL
STB10NK60Z
B10NK60Z
D
2
PAK
TUBE
(ONLY UNDER REQUEST)
STB10NK60Z-1
B10NK60Z
I
2
PAK
TUBE
STH10NK60ZFI
H10NK60FI
ISOWATT218
TUBE
STW10NK60Z
W10NK60Z
TO-247
TUBE
TO-220
TO-220FP
123
I
2
PAK
1
2
3
1
3
D
2
PAK
1
2
3
TO-247
1
2
3
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STH11020 TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA
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STI2003 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:30pF; Holding Current:150mA; Leakage Current:5uA
STI3003D Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:30pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:640V; Holding Current:50uA; Mounting Type:Surface Mount
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STH10NK60ZFI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-218VAR
STH11020 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA
STH11022 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA
STH110N10F7-2 功能描述:MOSFET N-Ch 100V 6mOhm 110A STripFET VII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STH110N10F7-6 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 100V 110A H2PAK-6
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