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參數(shù)資料
| 型號： | STH10NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 0.6ohm - 10A條- TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩ |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 255K |
| 代理商： | STH10NC60 |
1/16
April 2002
STP10NK60Z/FP, STB10NK60Z/-1
STH10NK60ZFI, STW10NK60Z
N-CHANNEL600V-0.65
-10ATO-220/FP/D
2
PAK/I
2
PAK/TO-247/ISOWATT218
Zener-Protected SuperMESH
Power MOSFET
I
TYPICAL R
DS
(on) = 0.65
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH
series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH
layout. In addition to pushing
on-resistance significantlydown, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh
products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
I
LIGHTING
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STB10NK60Z
STB10NK60Z-1
STH10NK60ZFI
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
600 V
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
10 A
10 A
10 A
10 A
10 A
10 A
115 W
115 W
35 W
115 W
35 W
156 W
MARKING
PACKAGE
PACKAGING
STP10NK60Z
P10NK60Z
TO-220
TUBE
STP10NK60ZFP
P10NK60ZFP
TO-220FP
TUBE
STB10NK60ZT4
B10NK60Z
D
2
PAK
TAPE & REEL
STB10NK60Z
B10NK60Z
D
2
PAK
TUBE
(ONLY UNDER REQUEST)
STB10NK60Z-1
B10NK60Z
I
2
PAK
TUBE
STH10NK60ZFI
H10NK60FI
ISOWATT218
TUBE
STW10NK60Z
W10NK60Z
TO-247
TUBE
TO-220
TO-220FP
123
I
2
PAK
1
2
3
1
3
D
2
PAK
1
2
3
TO-247
1
2
3
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STH10NC60FI | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH11020 | TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA |
| STH11022 | TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA |
| STI2002 | TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | TO-92 |
| STI2003 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:30pF; Holding Current:150mA; Leakage Current:5uA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STH10NC60FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH10NK60ZFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-218VAR |
| STH11020 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA |
| STH11022 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA |
| STH110N10F7-2 | 功能描述:MOSFET N-Ch 100V 6mOhm 110A STripFET VII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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