參數(shù)資料
型號(hào)： SST38VF166-70-4C-EK
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類(lèi)： PROM
英文描述： RECTIFIER BRIDGE 4A 600V 150A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
中文描述： 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 1/50頁(yè)
文件大小： 691K
代理商： SST38VF166-70-4C-EK
2001 Silicon Storage Technology, Inc.
327-3 2/01
1
S71065
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
FlashBank is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
16 Megabit FlashBank Memory
SST38VF166
FEATURES:
Single 2.7-3.6V Read and Write Operations
Separate Memory Banks for Code or Data
– Simultaneous Read and Write Capability
Superior Reliability
– Endurance:
E
2
bank - 500,000 Cycles (typical)
Flash bank - 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
– Active Current, Read: 15 mA (typical)
–
Active Current, Concurrent Read while Write:
40 mA (typical)
–
Standby Current: 3 μA (typical)
–
Auto Low Power Mode Current: 3 μA (typical)
Fast Write Operation
–
Flash Bank-Erase + Program: 8 sec (typical)
–
Flash Block-Erase + Program: 500 ms (typical)
–
Flash Sector-Erase + Program: 30 ms (typical)
–
E
2
bank Word-Write: 9 ms (typical)
Fixed Erase, Program, Write Times
–
Remain constant after cycling
Read Access Time
–
70 ns
Latched Address and Data
End-of-Write Detection
–
Toggle Bit
–
Data# Polling
E
2
Bank:
–
Word-Write (Auto Erase before Program)
–
Sector-Erase (32 Words) + Word-Program
(same as Flash bank)
Flash Bank: Two Small Erase Element Sizes
–
1 KWords per Sector or 32 KWords per Block
–
Erase either element before Word-Program
CMOS I/O Compatibility
JEDEC Standard Command Set
Packages Available
–
48-Pin TSOP (12mm x 20mm)
Continuous Hardware and Software
Data Protection (SDP)
A One Time Programmable (OTP) E
2
Sector
PRODUCT DESCRIPTION
The SST38VF166 consists of three memory banks, 2 each
512K x16 bits sector mode flash EEPROM plus a 4K x16
bits word alterable E
2
PROM manufactured with SST
’
s pro-
prietary, high performance SuperFlash Technology. The
SST38VF166 erases and programs with a single power
supply. The internal Erase/Program in the E
2
bank is trans-
parent to the user. The device conforms to (proposed)
JEDEC standard pinouts for word-wide memories.
The SST38VF166 device is divided into three separate
memory banks, 2 each 512K x16 Flash banks and a 4K
x16 E
2
bank. Each Flash bank is typically used for program
code storage and contains 512 sectors, each of 1 KWords
or 16 blocks, each of 32 KWords. The Flash banks may
also be used to store data. The E
2
bank is typically used for
data or configuration storage and contains 128 sectors,
each of 32 words. Any bank may be used for executing
code while writing data to a different bank. Each memory
bank is controlled by separate Bank Enable (BE#) lines.
The SST38VF166 inherently uses less energy during
Erase, Program, and Write than alternative flash technolo-
gies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter Erase time, the
total energy consumed during any Erase, Program, or
Write operation is less than alternative flash technologies.
The Auto Low Power mode automatically reduces the
active read current to approximately the same as standby;
thus, providing an average read current of approximately 1
mA/MHz of Read cycle time.
The SuperFlash technology provides fixed Erase, Program,
and Write times, independent of the number of Erase/Pro-
gram cycles that have occurred. Therefore the system soft-
ware or hardware does not have to be modified or de-rated
as is necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
Device Operation
The SST38VF166 operates as two independent 8-Megabit
Word-Program, Sector-Erase flash EEPROMs with the
additional functionality of a 64 Kbit word-alterable
E
2
PROM. All banks are superimposed in the same mem-
ory address space. All three memory banks share com-
mon address lines, I/O lines, WE#, and OE#. Memory
bank selection is by bank enable. BE#1 selects the first
SST38VF16616Mb (x16) FlashBank + 64Kb E
2
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