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參數(shù)資料
| 型號： | SIHF640L-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | SIHF640L-E3 |
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
1
3
L1
L2
D
B
B
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x
b
2
2 x
b
0.010
A
B
M
M
± 0.004
B
M
Base
metal
Plating
b
1,
b
3
(
b
,
b
2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
3
4
(Dat
u
m A)
2C
C
5
5
V
ie
w
A - A
E1
D1
E
4
4
B
H
Seating plane
Ga
u
ge
plane
0° to
8
°
Detail “A”
Rotated 90° CW
scale
8
:1
L3
A1
L4
L
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
b
0.51
0.99
0.020
0.039
E1
6.22
-
0.245
-
b1
0.51
0.89
0.020
0.035
e
2.54 BSC
0.100 BSC
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
0.25 BSC
0.010 BSC
D
8.38
9.65
0.330
0.380
L4
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
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