參數(shù)資料
型號: SIHF640L-E3
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, TO-262, I2PAK-3
文件頁數(shù): 3/9頁
文件大?。?/td> 170K
代理商: SIHF640L-E3
Document Number: 91037
S11-1047-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
J
= 25 °C
Fig. 2 - Typical Output Characteristics, T
J
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91037_01
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 μs Pulse Width
T
C
=
25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
,
10
0
10
1
10
1
10
0
10
-1
10
1
10
0
10
-1
10
0
10
1
V
DS,
Drain-to-Source Voltage (V)
I
D
,
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 μs Pulse Width
T
C
=
150 °C
91037_02
4.5 V
20 μs Pulse Width
V
DS
=
50 V
10
1
10
0
10
-1
I
D
,
V
GS,
Gate-to-Source Voltage (V)
5
6
7
8
9
10
4
25
°
C
150
°
C
91037_03
I
D
= 18 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J,
Junction Temperature (°C)
R
D
,
(
91037_04
- 60 - 40 - 20 0
20
40 60 80 100 120 140 160
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