參數(shù)資料
型號: SIHF640L-E3
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, TO-262, I2PAK-3
文件頁數(shù): 5/9頁
文件大小: 170K
代理商: SIHF640L-E3
Document Number: 91037
S11-1047-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
D
,
T
C
, Case Temperature (°C)
0
4
8
12
16
20
25
150
125
100
75
50
91037_09
Pulse width
1 μs
Duty factor
0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
T
t
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0
0.5
0.2
0.1
0.05
0.02
0.01
91037_11
10
-3
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