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參數(shù)資料
| 型號： | SIHFR120T |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 1989K |
| 代理商： | SIHFR120T |
Document Number: 91266
S10-1122-Rev. B, 10-May-10
www.vishay.com
1
Power MOSFET
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR120, SiHFR120)
Straight Lead (IRFU120, SiHFU120)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
low
on-resistance
and
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
= 25 °C, L = 5.3 mH, R
= 25
Ω
, I
AS
= 7.7 A (see fig. 12).
c. I
≤
9.2 A, dI/dt
≤
110 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
100
V
GS
= 10 V
0.27
16
4.4
7.7
Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
GDS
S
D
G
D
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHFR120-GE3
IRFR120PbF
SiHFR120-E3
IRFR120
SiHFR120
DPAK (TO-252)
SiHFR120TR-GE3
a
IRFR120TRPbF
a
SiHFR120T-E3
a
IRFR120TR
a
SiHFR120T
a
DPAK (TO-252)
SiHFR120TRR-GE3
a
IRFR120TRRPbF
a
SiHFR120TR-E3
a
IRFR120TRR
a
SiHFR120TR
a
DPAK (TO-252)
SiHFR120TRL-GE3
a
IRFR120TRLPbF
a
SiHFR120TL-E3
a
IRFR120TRL
a
SiHFR120TL
a
IPAK (TO-251)
SiHFU120-GE3
IRFU120PbF
SiHFU120-E3
IRFU120
SiHFU120
Lead (Pb)-free
SnPb
SYMBOL
V
DS
V
GS
LIMIT
100
± 20
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
UNIT
V
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
DM
W/°C
E
AS
I
AR
E
AR
mJ
A
mJ
T
C
= 25 °C
T
A
= 25 °C
P
D
W
dV/dt
T
J
, T
stg
V/ns
- 55 to + 150
260
d
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHFR120T-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IRFR120 |
| SIHFR120TL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR120TL-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR120TR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IRFR120 |
| SIHFR120TR-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IRFR120 |
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