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參數(shù)資料
| 型號： | SIHL540STL |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263, D2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 270K |
| 代理商： | SIHL540STL |
Document Number: 90386
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Power MOSFET
IRL540S, SiHL540S
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4 V and 5 V
175 °C Operating Temperature
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
low
on-resistance
and
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 841 μH, R
g
= 25
, I
AS
= 28 A (see fig. 12).
c. I
SD
28 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
100
V
GS
= 5 V
0.077
64
9.4
27
Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
2
PAK (TO-263)
SiHL540S-GE3
IRL540SPbF
SiHL540S-E3
D
2
PAK (TO-263)
SiHL540STRL-GE3
a
IRL540STRLPbF
a
SiHL540STL-E3
a
Lead (Pb)-free
SYMBOL
V
DS
V
GS
LIMIT
100
± 10
28
20
110
1.0
0.025
440
28
15
150
3.7
5.5
UNIT
V
Continuous Drain Current
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
DM
W/°C
E
AS
I
AR
E
AR
mJ
A
mJ
T
C
= 25 °C
T
A
= 25 °C
P
D
W
dV/dt
T
J
, T
stg
V/ns
- 55 to + 175
300
d
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相關代理商/技術參數(shù) |
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| SIHL540STL-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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| SIHL620 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHL620-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHL630 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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