參數(shù)資料
型號(hào): SIHFR120T
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, DPAK-3
文件頁數(shù): 8/10頁
文件大?。?/td> 1989K
代理商: SIHFR120T
Document Number: 91344
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
E
b
3
L3
L4
b
2
e
b
D
H
E1
D1
A
c2
L1
L2
c
A1
L
θ
MILLIMETERS
INCHES
DIM.
E
L
L1
L2
L3
L4
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
MIN.
6.40
1.40
MAX.
6.73
1.77
MIN.
0.252
0.055
MAX.
0.265
0.070
2.743 REF
0.508 BSC
0.108 REF
0.020 BSC
0.89
0.64
6.00
9.40
0.64
0.77
5.21
1.27
1.01
6.22
10.40
0.88
1.14
5.46
0.035
0.025
0.236
0.370
0.025
0.030
0.205
0.050
0.040
0.245
0.409
0.035
0.045
0.215
2.286 BSC
0.090 BSC
2.20
0.00
0.45
0.45
5.30
4.40
0'
2.38
0.13
0.60
0.58
-
-
10'
0.087
0.000
0.018
0.018
0.209
0.173
0'
0.094
0.005
0.024
0.023
-
-
10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
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