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參數(shù)資料
| 型號： | SIHF830-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 201K |
| 代理商： | SIHF830-E3 |
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Power MOSFET
IRF830, SiHF830
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
low
on-resistance
and
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 24 mH, R
g
= 25
, I
AS
= 4.5 A (see fig. 12).
c. I
4.5 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
500
V
GS
= 10 V
1.5
38
5.0
22
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220AB
IRF830PbF
SiHF830-E3
IRF830
SiHF830
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DS
V
GS
LIMIT
500
± 20
4.5
2.9
18
0.59
280
4.5
7.4
74
3.5
UNIT
V
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
DM
W/°C
mJ
A
mJ
W
V/ns
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
T
C
= 25 °C
- 55 to + 150
300
d
10
1.1
°C
for 10 s
Mounting Torque
6-32 or M3 screw
lbf · in
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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