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參數(shù)資料
| 型號(hào)： | SIHF830-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | SIHF830-E3 |
www.vishay.com
6
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF830, SiHF830
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-V
DD
A
10 V
Vary t
to obtain
required I
AS
I
AS
V
DS
V
DD
V
(BR)DSS
t
p
91063_12c
600
0
100
200
300
400
500
25
150
125
100
75
50
Starting T
J
, Junction Temperature (°C)
E
A
,
Bottom
Top
I
D
2.0 A
2.8 A
4.5 A
V
DD
= 50 V
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 μF
0.2 μF
50 k
Ω
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
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