參數(shù)資料
型號: SIHF830-E3
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 201K
代理商: SIHF830-E3
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF830, SiHF830
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91063_09
I
D
,
T
C
, Case Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
25
150
125
100
75
50
Pulse width
1 μs
Duty factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
91063_11
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (S)
T
t
J
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0
-
0.5
0.2
0.1
0.05
0.02
0.01
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